[1825 days] Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Optical and Photothermal Characterization
[1825 days] Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Optical and Photothermal Characterization [1825 days] Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Optical and Photothermal Characterization

[1825 days] Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Optical and Photothermal Characterization

CHI TIẾT SẢN PHẨM

Mã sản phẩm:
9780127521466
Tồn kho:
Còn hàng
Nhà xuất bản:
Loại bìa:
Page Fidelity
Ngôn ngữ:
English
Tác giả:
Willardson, Robert K.


Special Price 6,350,000 VNĐ

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Số lượng

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Key Features
* Provides basic knowledge of ion implantation-induced defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools for processed semiconductors
* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

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